Electronic device including an integrated circuit with transistors coupled to each other

ABSTRACT

An electronic device, including an integrated circuit, can include a buried conductive region and a semiconductor layer overlying the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface lying closer to the buried conductive region. The electronic device can also include a first doped region and a second doped region spaced apart from each other, wherein each is within the semiconductor layer and lies closer to primary surface than to the opposing surface. The electronic device can include current-carrying electrodes of transistors. A current-carrying electrode of a particular transistor includes the first doped region and is a source or an emitter and is electrically connected to the buried conductive region. Another current-carrying electrode of a different transistor includes the second doped region and is a drain or a collector and is electrically connected to the buried conductive region.

RELATED APPLICATION

This application is a continuation of and claims priority under 35U.S.C. §120 to U.S. patent application Ser. No. 12/495,250 entitled“Electronic Device Including an Integrated Circuit With TransistorsCoupled to Each Other” by Loechelt filed Jun. 30, 2009, which isassigned to the current assignee hereof and incorporated herein byreference in its entirety.

FIELD OF THE DISCLOSURE

The present disclosure relates to electronic devices and processes offorming electronic devices, and more particularly to, electronic devicesincluding integrated circuits having transistors coupled to each otherand processes of forming the same.

RELATED ART

Metal-oxide semiconductor field effect transistors (MOSFETs) are acommon type of power switching device. A MOSFET includes a sourceregion, a drain region, a channel region extending between the sourceand drain regions, and a gate structure provided adjacent to the channelregion. The gate structure includes a gate electrode layer disposedadjacent to and separated from the channel region by a thin dielectriclayer.

When a MOSFET is in the on state, a voltage is applied to the gatestructure to form a conduction channel region between the source anddrain regions, which allows current to flow through the device. In theoff state, any voltage applied to the gate structure is sufficiently lowso that a conduction channel does not form, and thus current flow doesnot occur. During the off state, the device must support a high voltagebetween the source and drain regions.

In a particular application, a pair of power transistors can be used toallow an output to switch between two different voltages. The output canbe connected to a source of a high-side power transistor and to a drainof a low-side power transistor. When the high-side power transistor isactivated, the output will be at a voltage corresponding to the voltageon a drain of the high-side power transistor, and when the low-sidepower transistor is activated, the output will be at a voltagecorresponding to a source of the low-side power transistor. In aparticular physical embodiment, the high-side power transistor and thelow-side power transistor are typically discrete transistors on separatedies that are interconnected to each other by bonded wire or othersimilar interconnects. The interconnects increase the parasiticcharacteristics of the electronic device, including the high-side andlow-side power transistors, which are undesired.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments are illustrated by way of example and are not limited in theaccompanying figures.

FIG. 1 includes an illustration of a cross-sectional view of a portionof a workpiece that includes a buried conductive region.

FIG. 2 includes an illustration of a cross-sectional view of theworkpiece of FIG. 1 after forming a buried doped region for a high-sidepower transistor.

FIG. 3 includes an illustration of a cross-sectional view of theworkpiece of FIG. 2 after forming a semiconductor layer, a pad layer,and a stopping layer.

FIG. 4 includes an illustration of a cross-sectional view of theworkpiece of FIG. 3 after patterning portions of the pad and stoppinglayers and forming vertical isolation regions.

FIG. 5 includes an illustration of a cross-sectional view of theworkpiece of FIG. 4 after patterning other portions of the pad andstopping layers and forming sidewall spacers.

FIG. 6 includes an illustration of a cross-sectional view of theworkpiece of FIG. 5 after forming trenches extending through asemiconductor layer toward the buried conductive region.

FIG. 7 includes an illustration of a cross-sectional view of theworkpiece of FIG. 6 after forming insulating spacers within thetrenches.

FIG. 8 includes an illustration of a cross-sectional view of theworkpiece of FIG. 7 after forming recessed conductive structures withinthe trenches.

FIG. 9 includes an illustration of a cross-sectional view of theworkpiece of FIG. 8 after removing sidewall spacers adjacent to the padand stopping layers and after removing portions of the insulatingspacers lying at elevations above the conductive structures.

FIG. 10 includes an illustration of a cross-sectional view of theworkpiece of FIG. 9 after forming conductive plugs and removingremaining portions of the pad and stopping layers.

FIG. 11 includes an illustration of a cross-sectional view of theworkpiece of FIG. 10 after forming an implant screen layer and drainregions.

FIG. 12 includes an illustration of a cross-sectional view of theworkpiece of FIG. 11 after forming an insulating layer.

FIG. 13 includes an illustration of a cross-sectional view of theworkpiece of FIG. 12 after forming a patterned conductive layer.

FIG. 14 includes an illustration of a cross-sectional view of theworkpiece of FIG. 13 after forming an insulating layer over thepatterned conductive layer.

FIG. 15 includes an illustration of a cross-sectional view of theworkpiece of FIG. 14 after patterning portions of the insulating andpatterned conductive layers and forming sidewall spacers.

FIG. 16 includes an illustration of a cross-sectional view of theworkpiece of FIG. 15 after forming another conductive layer and wellregions.

FIG. 17 includes an illustration of a cross-sectional view of theworkpiece of FIG. 16 after forming a remaining portion of the conductivelayer, etching the resulting conductive layer to form a gate electrode,and forming source regions.

FIG. 18 includes an illustration of a cross-sectional view of theworkpiece of FIG. 17 after forming sidewall spacers, etching portions ofthe source regions, and forming well contact regions.

FIG. 19 includes an illustration of a cross-sectional view of theworkpiece of FIG. 18 after forming conductive straps to the sourceregions, well contact regions, and conductive plugs.

FIG. 20 includes an illustration of a cross-sectional view of theworkpiece of FIG. 19 after forming a substantially completed electronicdevice in accordance with an embodiment of the present invention.

FIGS. 21 to 25 include illustrations of cross-sectional views of aportion of the workpiece of FIG. 3, wherein trenches, vertical isolationregions, and vertical conductive structures are formed in accordancewith another embodiment.

Skilled artisans appreciate that elements in the figures are illustratedfor simplicity and clarity and have not necessarily been drawn to scale.For example, the dimensions of some of the elements in the figures maybe exaggerated relative to other elements to help to improveunderstanding of embodiments of the invention.

DETAILED DESCRIPTION

The following description in combination with the figures is provided toassist in understanding the teachings disclosed herein. The followingdiscussion will focus on specific implementations and embodiments of theteachings. This focus is provided to assist in describing the teachingsand should not be interpreted as a limitation on the scope orapplicability of the teachings. However, other teachings can certainlybe utilized in this application.

As used herein, the terms “horizontally-oriented” and“vertically-oriented,” with respect to a region or structure, refers tothe principal direction in which current flows through such region orstructure. More specifically, current can flow through a region orstructure in a vertical direction, a horizontal direction, or acombination of vertical and horizontal directions. If current flowsthrough a region or structure in a vertical direction or in acombination of directions, wherein the vertical component is greaterthan the horizontal component, such a region or structure will bereferred to as vertically oriented. Similarly, if current flows througha region or structure in a horizontal direction or in a combination ofdirections, wherein the horizontal component is greater than thevertical component, such a region or structure will be referred to ashorizontally oriented.

The term “normal operation” and “normal operating state” refer toconditions under which an electronic component or device is designed tooperate. The conditions may be obtained from a data sheet or otherinformation regarding voltages, currents, capacitance, resistance, orother electrical parameters. Thus, normal operation does not includeoperating an electrical component or device well beyond its designlimits.

The term “power transistor” is intended to mean a transistor is designedto normally operate at least a 10 V difference to be maintained betweenthe source and drain or emitter and collector of the transistor. Forexample, when the transistor is in an off-state, a 10 V may bemaintained between the source and drain without a junction breakdown orother undesired condition occurring.

The terms “comprises,” “comprising,” “includes,” “including,” “has,”“having” or any other variation thereof, are intended to cover anon-exclusive inclusion. For example, a method, article, or apparatusthat comprises a list of features is not necessarily limited only tothose features but may include other features not expressly listed orinherent to such method, article, or apparatus. Further, unlessexpressly stated to the contrary, “or” refers to an inclusive-or and notto an exclusive-or. For example, a condition A or B is satisfied by anyone of the following: A is true (or present) and B is false (or notpresent), A is false (or not present) and B is true (or present), andboth A and B are true (or present).

Also, the use of “a” or “an” is employed to describe elements andcomponents described herein. This is done merely for convenience and togive a general sense of the scope of the invention. This descriptionshould be read to include one or at least one and the singular alsoincludes the plural, or vice versa, unless it is clear that it is meantotherwise. For example, when a single item is described herein, morethan one item may be used in place of a single item. Similarly, wheremore than one item is described herein, a single item may be substitutedfor that more than one item.

Group numbers corresponding to columns within the Periodic Table of theelements use the “New Notation” convention as seen in the CRC Handbookof Chemistry and Physics, 81^(st) Edition (2000-2001).

Unless otherwise defined, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this invention belongs. The materials, methods, andexamples are illustrative only and not intended to be limiting. To theextent not described herein, many details regarding specific materialsand processing acts are conventional and may be found in textbooks andother sources within the semiconductor and electronic arts.

In the figures that follow, two different portions of a workpiece areillustrated to improve understanding of the effect of processingoperations when forming different types of transistors on the sameworkpiece. The transistors will be part of the same integrated circuit.The illustrations closer to the top of the figures correspond to ahigh-side power transistor, and the illustrated closer to the bottom ofthe same figures correspond to a low-side power transistor.

FIG. 1 includes an illustration of a cross-sectional view of a portionof a workpiece 100 that includes a buried conductive region 102. Theburied conductive region 102 can include a Group 14 element (i.e.,carbon, silicon, germanium, or any combination thereof) and can beheavily n-type or p-type doped. For the purposes of this specification,heavily doped is intended to mean a peak dopant concentration of atleast 10¹⁹ atoms/cm³, and lightly doped is intended to mean a peakdopant concentration of less than 10¹⁹ atoms/cm³. The buried conductiveregion 102 can be a portion of a heavily doped substrate (e.g., aheavily n-type doped wafer) or may be a buried doped region overlying asubstrate of opposite conductivity type or overlying a buried insulatinglayer (not illustrated) that lies between a substrate and the buriedconductive region 102. In an embodiment, the buried conductive region102 is heavily doped with an n-type dopant, such as phosphorus, arsenic,antimony, or any combination thereof. In a particular embodiment, theburied conductive region 102 includes arsenic or antimony if diffusionof the buried conductive region 102 is to be kept low, and in aparticular embodiment, the buried conductive region 102 includesantimony to reduce the level of autodoping (as compared to arsenic)during formation of a subsequently-formed semiconductor layer. Theburied conductive region 102 will be used to electrically connect thesource of the high-side power transistor and the drain of the low-sidepower transistor together and be part of an output node for theelectronic device.

Referring to FIG. 2, a semiconductor layer 204 is formed over the buriedconductive region 102. The semiconductor layer 204 can include a Group14 element (i.e., carbon, silicon, germanium, or any combinationthereof) and any of the dopants as described with respect to the buriedconductive region 102 or dopants of the opposite conductivity type. Inan embodiment, the semiconductor layer 204 is a lightly doped n-type orp-type epitaxial silicon layer having a thickness in a range ofapproximately 0.2 microns to approximately 2.0 micron, and a dopingconcentration no greater than approximately 10¹⁷ atoms/cm³, and inanother embodiment, a doping concentration of at least approximately10¹⁴ atoms/cm³. The semiconductor layer 204 is formed over all of theworkpiece 100.

A portion of the semiconductor layer 204 within the high-side powertransistor is heavily doped with dopant of opposite conductivity type ascompared to the buried conductive region 102 to form a buried dopedregion 206. The buried doped region 206 can help with isolation withinthe high-side power transistor and reduce parasitic characteristics ofthe high-side power transistor. In a particular embodiment, the burieddoped region 206 has a peak dopant concentration of at leastapproximately 10¹⁸ atoms/cm³ of a p-type dopant.

Referring to FIG. 3, a semiconductor layer 304 is formed over thesemiconductor layer 204 (not labeled in FIG. 3) and buried doped region206. In a particular embodiment, the semiconductor layers 204 and 304have the same conductivity type and both are lightly doped. Thus, thedashed line within the illustration of the low-side power transistor inFIG. 3, illustrates an approximate location where the semiconductorlayer 204 ends and the semiconductor layer 304 starts. The semiconductorlayer 304 has a primary surface 305. The semiconductor layer 304 caninclude a Group 14 element (i.e., carbon, silicon, germanium, or anycombination thereof) and any of the dopants as described with respect tothe buried conductive region 102 or dopants of the opposite conductivitytype. In an embodiment, the semiconductor layer 304 is a lightly dopedn-type or p-type epitaxial silicon layer having a thickness in a rangeof approximately 0.5 microns to approximately 5.0 microns, and a dopingconcentration no greater than approximately 10¹⁷ atoms/cm³, and inanother embodiment, a doping concentration of at least approximately10¹⁴ atoms/cm³. The dopant concentration within the semiconductor layer304 as formed or before selectively doping regions within thesemiconductor layer 304 will be referred to as the background dopantconcentration. In subsequent illustrations of the low-side powertransistor, the combination of the semiconductor layers 204 and 304 willbe referred to as the semiconductor layer 304 and will not include adashed line.

A pad layer 306 and a stopping layer 308 (e.g., a polish-stop layer oran etch-stop layer) are sequentially formed over the semiconductor layer304 using a thermal growth technique, a deposition technique, or acombination thereof. Each of the pad layer 306 and the stopping layer308 can include an oxide, a nitride, an oxynitride, or any combinationthereof. In an embodiment, the pad layer 306 has a different compositionas compared to the stopping layer 308. In a particular embodiment, thepad layer 306 includes an oxide, and the stopping layer 308 includes anitride.

Referring to FIG. 4, a patterned masking layer 402 is formed over thestopping layer 308. Openings within the patterned masking layer 402 areformed where vertical isolation regions will be formed. The verticalisolation regions are formed where the high-side power transistor isbeing formed. Thus, the patterned masking layer 402 covers substantiallyall of the stopping layer 308 where the low-side power transistor isbeing formed. In a particular embodiment, exposed portions of the padlayer 306 and stopping layer 308 are removed to expose portions of thesemiconductor layer 304. In another embodiment (not illustrated),exposed portions pad layer 306 or both the pad layer 306 and stoppinglayer 308 are not etched. The presence of the pad layer 306 or both thepad layer 306 and stopping layer 308 may help to reduce implantchanneling during a subsequent implant.

Portions of the semiconductor layer 304 under the openings in thepatterned masking layer 402 are implanted (as illustrated by arrows 422)to form vertical isolation regions 424. The implantation may beperformed as a single implant or as a plurality of implants. When aplurality of implants is performed, different energies, differentspecies, or different energies and species may be used to form thevertical isolation regions 424. The conductivity type of the verticalisolation regions 424 can be the same as the buried doped region 206 andopposite that of the buried conductive region 102. In a particularembodiment, the vertical isolation regions 424 are p-type and have adopant concentration of at least approximately 10¹⁸ atoms/cm³. Thecombination of the vertical isolation regions 424 and buried dopedregion 206 help to isolate the portions of the semiconductor layer 304within the high-side power transistor. After the implant, the patternedmasking layer 402 is removed. In another embodiment described later inthis specification, the vertical isolation regions can be formed usingother techniques.

Another patterned masking layer (not illustrated) is formed overlocations where the pad layer 306 and the stopping layer 308 are to beremoved and trenches subsequently formed. At this point in the process,the pad layer 306 and stopping layer 308 are patterned within thelow-side power transistor. If the pad layer 306 or both the pad layer306 and stopping layer 308 have not been patterned within the high-sidepower transistor, the pad layer 306 or both the pad layer and stoppinglayer 308 within the high-side power transistor can be patterned withthe corresponding portions within the low-side power transistor. Afterthe pad layer 306 and stopping layer 308 have been patterned within thelow-side power transistor (and possibly the high-side power transistor),the other patterned masking layer is removed.

Sidewall spacers 524 are formed as illustrated in FIG. 5. The sidewallspacers 524 can be used to determine the widths of thesubsequently-formed trenches and remaining portions of the verticalisolation regions 424 lying along sidewalls of the subsequently-formedtrenches. The sidewall spacers 524 can be formed by depositing asacrificial layer and anisotropically etching that layer. In aparticular embodiment, the sacrificial layer can include an oxide, anitride, an oxynitride, or any combination thereof. In a more particularembodiment, the sacrificial layer and the stopping layer 308 havedifferent compositions. The thickness of the sacrificial layer may be nogreater than approximately 900 nm or approximately 700 nm, or may be atleast approximately 50 nm or approximately 100 nm.

Exposed portions of the semiconductor layer 304 and, within thehigh-side power transistor, portions of the vertical isolation regions424 and the buried doped regions 206 are etched to form trenches 624that extend from the primary surface 305 toward the buried conductiveregion 102, as illustrated in FIG. 6. The trenches 624 may extend partlyor completely through the semiconductor layer 304 or buried doped region206. The widths of the trenches 624 are not so wide that asubsequently-formed conductive layer is incapable of filling thetrenches 624. In a particular embodiment, the widths of each trenches624 is at least approximately 0.3 micron or approximately 0.5 micron,and in another particular embodiment, the width of each trenches 624 isno greater than approximately 4 microns or approximately 2 microns.After reading this specification, skilled artisans will appreciate thatnarrower or wider widths outside the particular dimensions described maybe used. The trenches 624 can extend to the buried conductive region102; however, the trenches 624 may be shallower if needed or desired.The trenches 624 are formed using an anisotropic etch. In an embodiment,a timed etch can be performed, and in another embodiment, a combinationof endpoint detection (e.g., detecting the dopant species from theburied conductive region 102, such as arsenic or antimony) and a timedoveretch may be used.

Insulating sidewall spacers 724 can be formed along the exposedsidewalls of the trenches 624, as illustrated in FIG. 7. The insulatingsidewall spacers 724 can include an oxide, a nitride, an oxynitride, orany combination thereof. The layer from which the insulating sidewallspacers 724 are formed can be thermally grown or deposited, and thelayer can be anisotropically etched to remove the layer from the bottomsof the trenches 624. If needed or desired, an etch can be performed toextend the trenches 624 closer to or further into the buried conductiveregion 102. In another embodiment, the insulating sidewall spacers 724are not needed or are not formed within all trenches within thehigh-side or low-side power transistors. In a particular embodiment, theinsulating sidewall spacers 724 may only be used within the trenches 624of the low-side power transistor, and not used within the trenches 624of the high-side power transistor. In another particular embodiment, theinsulating sidewall spacers 724 may only be used within the trenches 624of the high-side power transistor, and not used within the trenches 624of the low-side power transistor.

A conductive layer is formed over the stopping layer 308 and within thetrenches 624, and, in a particular embodiment, the conductive layersubstantially fills the trenches 624. The conductive layer can bepolycrystalline and include a metal-containing orsemiconductor-containing material. In an embodiment, the conductivelayer can include a heavily doped semiconductor material, such asamorphous silicon or polysilicon. In another embodiment, the conductivelayer includes a plurality of films, such as an adhesion film, a barrierfilm, and a conductive fill material. In a particular embodiment, theadhesion film can include a refractory metal, such as titanium,tantalum, tungsten, or the like; the barrier film can include arefractory metal nitride, such as titanium nitride, tantalum nitride,tungsten nitride, or the like, or a refractorymetal-semiconductor-nitride, such as TaSiN; and the conductive fillmaterial can include tungsten or tungsten silicide. In a more particularembodiment, the conductive layer can include Ti/TiN/WSi. The selectionof the number of films and composition(s) of those film(s) depend onelectrical performance, the temperature of a subsequent heat cycle,another criterion, or any combination thereof. Refractory metals andrefractory metal-containing compounds can withstand high temperatures(e.g., melting points of such materials can be at least 1400° C.), maybe conformally deposited, and have a lower bulk resistivity than heavilydoped n-type silicon. After reading this specification, skilled artisanswill be able to determine the composition of the conductive layer tomeet their needs or desires for a particular application.

A portion of the conductive layer that overlies the stopping layer 308is removed to form conductive structures 824 within the trenches 624, asillustrated in the embodiment of FIG. 8. The removal can be performedusing a chemical-mechanical polishing or blanket etching technique. Thestopping layer 308 may be used as a polish-stop or etch-stop layer.Polishing or etching may be continued for a relatively short time afterthe stopping layer 308 is reached to account for a non-uniformity acrossthe workpiece with respect to the thickness of the conductive layer,non-uniformity of the polishing or etching operation, or any combinationthereof. A continued etch or other removal operation can be used torecess the conductive structures 824 further into the trenches 624, asillustrated in FIG. 8, if needed or desired. The recessed conductivestructures 824 may allow the vertical isolation regions 724 andconductive structures 824 to be electrically connected to one anothermore readily. The conductive structures 824 form vertically conductiveregions. When in the form of a finished electronic device, thecombination of conductive structures 824 and buried conductive region102 electrically connects the source of the high-side power transistorto the drain of the low-side power transistor.

The sidewall spacers 524 and exposed portions of the insulating sidewallspacers 724 within the trenches 624 are removed, as illustrated in FIG.9. The removal can be performed using an isotropic etching techniqueusing a wet or dry etchant. In a particular embodiment, the sidewallspacers 524 and the insulating sidewall spacers 724 include an oxide,and the stopping layer 308 includes a nitride, and therefore, thesidewall spacers 524 and the insulating sidewall spacers 724 can beselectively removed without removing a substantial amount of thestopping layer 308. At this point in the process, portions of thesemiconductor layer 304, the vertical isolation regions 724, and theconductive structures 824 are exposed.

In another embodiment (not illustrated), within the low-side powertransistor, portions of the semiconductor layer 304 near the trenches624 may be doped to form part of the drain regions for the low-sidepower transistor. A mask may be formed over the high-side powertransistor to reduce the likelihood of counter doping the verticalisolation regions 424 within the high-side power transistor. Afterportions of the semiconductor layer 304 are doped, the mask is removed.An optional oxidation operation can be performed to help round the uppercorners of the semiconductor layer 304.

In FIG. 10, conductive plugs 1002 are formed to electrically connect theconductive structures 824 to the vertical isolation regions 724 and thesemiconductor layer 304 or doped regions within the semiconductor layer304. The conductive plugs 1002 can be formed using any of the materialsand methods of formation for the conductive structures 824, except thatthe conductive plugs 1002 are not recessed within the trenches 624. Theconductive plugs 1002 and conductive structures 824 may include the samematerial or different materials and may be formed using the sametechnique or different techniques. The pad layer 306 and the stoppinglayer 308 may be removed at this point in the process.

An implant screen layer 1100 is formed over the primary surface 305, asillustrated in FIG. 11. The implant screen layer 1100 can include anoxide, a nitride, or an oxynitride and may have a thickness in a rangeof approximately 2 nm to approximately 50 nm. The implant screen layer1100 can be formed by a thermal growth or deposition technique.

Drain regions 1102 and 1122 are formed within the semiconductor layer304 for the high-side and low-side power transistors, respectively. Eachof the drain regions 1102 includes a relatively higher dopantconcentration and deeper portion 1104 and a relatively lighter dopantconcentration and shallower portion 1106, and each of the drain regions1122 includes a relatively higher dopant concentration and deeperportion 1124 and a relatively lighter dopant concentration and shallowerportion 1126. In another embodiment, the deeper portion 1124 of thedrain region 1122 may be omitted from the low-side power transistor.

The portions 1104 and 1124 are highly conductive and are designed to beat a high voltage, and the portions 1106 and 1126 are somewhat moreresistive and reduce the voltage near the subsequently-formed gatedielectric layer and gate electrodes. Under normal operating conditionsin which a high voltage is applied to the drain of a power transistor,most or all of regions 1106 and 1126 will be depleted of carriers, andmost or all of regions 1104 and 1124 will be undepleted of carriers. Ina particular non-limiting embodiment, the portions 1106 and 1126 arehorizontally-oriented doped regions that are spaced apart from theburied conductive region 102. In a normal operating state, the principalcharge carrier (electrons) or current flow through the portions 1106 and1126 will be in horizontal direction.

The portions 1104 and 1124 can include dopant type opposite that of thevertical isolation regions 424 and have a dopant concentration of atleast approximately 10¹⁹ atoms/cm³, and the portions 1106 and 1126 mayinclude dopant type opposite that of the vertical isolation regions 424and have a dopant concentration of less than approximately 10¹⁹atoms/cm³ and at least approximately 10¹⁶ atoms/cm³. The portions 1106and 1126 have depths in a range of approximately 0.1 micron toapproximately 0.5 microns, and extend laterally from the portions 1104and 1124 in a range of approximately 0.2 micron to approximately 2.0microns. The lateral dimension (from either the vertically-orientedconductive structure or the more heavily doped portions 1104 and 1124)can depend on the voltage difference between the source and drain of thepower transistor being formed. As the voltage difference between thesource and drain of the transistor increases, the lateral dimension canalso increase. In an embodiment, the voltage difference is no greaterthan approximately 30 V, and in another embodiment, the voltagedifference is no greater than approximately 20 V. The peak dopingconcentration within the portions 1106 and 1126 can be in a range ofapproximately 2×10¹⁷ atoms/cm³ to approximately 2×10¹⁸ atoms/cm³, and ina particular embodiment, in a range of approximately 4×10¹⁷ atoms/cm³ toapproximately 7×10¹⁷ atoms/cm³.

In a particular embodiment, the portions 1104 and 1124 are formed usingthe same masking layer and the same implant species and other implantparameters compared to each other, and the portions 1106 and 1126 areformed using the same masking layer and the same implant species andother implant parameters compared to each other; however the maskinglayers and implant species and parameters are different for portions1104 and 1124 as compared to the portions 1106 and 1126. In subsequentfigures, the drain regions 1102 and 1122 are illustrated withoutdifferentiating the different portions.

In an alternate embodiment, portions 1106 and 1126 can extendcontinuously across the length of the unit cell of the transistor (i.e.,extend to regions where channel and source regions will be subsequentlyformed). The doping of the channel region, to be described later, iscommensurately increased to counter-dope the portion of the drain regionwithin the channel. The advantage of extending the lightly dopedportions 1106 and 1126 of the drain into the channel region is that itreduces or eliminates the impact of misalignment of the drain maskinglayer. In a further embodiment, this masking layer can be eliminated,allowing the implant that forms regions 1106 and 1126 to be continuousacross the entire workpiece.

An insulating layer 1202 is formed over the conductive plugs 1002 andthe implant screen layer 1100 as illustrated in FIG. 12. The insulatinglayer 1202 includes at least two different types of regions havingdifferent thicknesses. In effect, the insulating layer 1202 has aterraced configuration, the significance of which is described later inthis specification. In the embodiment as illustrated in FIG. 12, theinsulating layer 1202 includes three regions each having a differentthickness. The thinnest regions overlie the more lightly doped portions(i.e., portions 1106 and 1126 in FIG. 11) of the drain regions 1102 and1122 and over portions of the semiconductor layer 304 near the primarysurface 305 and outside of the drain regions 1102 and 1122. The thickestregions overlie the more heavily doped portions (i.e., portions 1104 and1124) of the drain regions 1102 and 1122. Intermediate regions may liebetween the thinner and thickest regions and are an optional feature.

In an embodiment, the insulating layer 1202 within the thinnest regionshave a thickness of at least approximately 0.02 microns or at leastapproximately 0.05 microns, and in another embodiment, the insulatinglayer 1202 within the thinnest regions have a thickness no greater thanapproximately 0.2 microns or no greater than approximately 0.1 microns.In an embodiment, the insulating layer 1202 within the thickest regionshave a thickness of at least approximately 0.15 microns or at leastapproximately 0.25 microns, and in another embodiment, the insulatinglayer 1202 within the thickest regions have a thickness no greater thanapproximately 0.8 microns or no greater than approximately 0.5 microns.The intermediate regions (between the thinner and thickest regions) mayhave a thickness substantially the same as the thinnest region or thethickest region or a thickness in between that of the thinner andthickest regions. In an embodiment, the insulating layer 1202 within theintermediate regions have a thickness of at least approximately 0.05microns or at least approximately 0.15 microns, and in anotherembodiment, the insulating layer 1202 within the intermediate regionshave a thickness no greater than approximately 0.5 microns or no greaterthan approximately 0.25 microns. In a particular embodiment, theinsulating layer 1202 within the thinnest regions have a thickness in arange of approximately 0.03 microns to approximately 0.08 microns, theinsulating layer 1202 within the thickest regions have a thickness in arange of approximately 0.3 microns to approximately 0.5 microns, and theinsulating layer 1202 within the intermediate regions have a thicknessin a range of approximately 0.13 microns to approximately 0.2 microns.

The insulating layer 1202 can be formed by different techniques andachieve different shapes as seen from cross-sectional views. Theinsulating layer 1202 can be formed from a single insulating film or aplurality of insulating films that are deposited over the workpiece. Thesingle insulating film or the plurality of insulating films can includean oxide, a nitride, an oxynitride, or any combination thereof. In aparticular embodiment, the characteristics of the insulating layer 1202may be different for points closer to the implant screen layer 1100 ascompared to corresponding points further from the implant screen layer1100. In an embodiment, the composition of the insulating layer 1202 maychange during or between depositions. For example, an oxide film may becloser to the implant screen layer 1100, and a nitride film may bedeposited over the oxide film. In another embodiment, a dopant, such asphosphorus, can be incorporated at an increasing concentration during alater part of the deposition. In still another embodiment, the stresswithin the film can be changed by changing deposition parameters (e.g.,radio frequency power, pressure, etc.) even though the composition issubstantially the same throughout the thickness of the insulating layer1202. In further embodiments, combinations of the foregoing may be used.A mask is formed over the thicker and intermediate region and apatterning technique is used to achieve the desired shape. Thosetechniques include isotropically etching a portion of the insulatinglayer 1202, alternative etching the insulating material and etching asidewall etch of the overlying mask, etching the insulating material andetching a sidewall of the overlying mask, taking advantage of adifferential composition (doped oxide etches faster than undoped oxide),patterning followed by formation of a sidewall spacer, another suitabletechnique, or any combination thereof.

In FIG. 13, a conductive layer 1302 is deposited over the insulatinglayer 1202 and patterned to form openings 1304 where drain contactstructures will be subsequently made to the drain regions 1102 of thehigh-side power transistors. The conductive layer 1302 includes aconductive material or may be made conductive, for example, by doping.More particularly, the conductive layer 1302 can include a dopedsemiconductor material (e.g., heavily doped amorphous silicon,polysilicon, etc.), a metal-containing material (a refractory metal, arefractory metal nitride, a refractory metal silicide, etc.), or anycombination thereof. The conductive layer 1302 has a thickness in arange of approximately 0.05 microns to 0.5 approximately microns. In aparticular embodiment, the conductive layer 1302 will be used to form aconductive electrode.

An insulating layer 1402 is formed over the conductive layer 1302, asillustrated in FIG. 14. The insulating layer 1402 can include a singlefilm or a plurality of films. Each film within the insulating layer 1402can include an oxide, a nitride, an oxynitride, or any combinationthereof. In another particular embodiment, a nitride film lies closestto the conductive layer 1302 and has a thickness in a range ofapproximately 0.05 microns to approximately 0.2 microns. An oxide filmoverlies the nitride film and has a thickness in a range ofapproximately 0.2 microns to approximately 0.9 microns. Anantireflective film may overlie the oxide film or may be incorporatedelsewhere within the insulating layer 1402. For example, the nitridefilm can be selected with an appropriate thickness to serve as anetch-stop layer and as an antireflective film. In another embodiment,more or fewer films may be used, and thicknesses as described herein aremerely illustrative and not meant to limit the scope of the presentinvention.

The insulating layer 1402, conductive layer 1302, and insulating layer1202 are patterned to form openings, and insulating spacers 1502 areformed, as illustrated in FIG. 15. The openings are formed such thatportions of the drain regions 1102 and 1122 underlie the openings. Suchportions (i.e., portions 1106 and 1126 as illustrated in FIG. 11) allowpart of the drain regions 1102 and 1122 to underlie part of asubsequently-formed gate electrode. Insulating spacers 1502 are formedalong sides of the openings. The insulating spacers 1502 electricallyinsulate the conductive layer 1302 from a subsequently-formed gateelectrode. The insulating spacers 1502 can include an oxide, a nitride,an oxynitride, or any combination thereof, and have widths at the basesof the insulating spacers 1502 in a range of approximately 50 nm toapproximately 200 nm.

FIG. 16 includes an illustration of the workpiece after forming a gatedielectric layer 1600, a conductive layer 1602, and well regions 1604and 1624. Portions of the implant screen layer 1100 are removed byetching, and the gate dielectric layer 1600 is formed over the exposedsurface of the workpiece. In a particular embodiment, the gatedielectric layer 1600 includes an oxide, a nitride, an oxynitride, orany combination thereof and has a thickness in a range of approximately5 nm to approximately 100 nm. The conductive layer 1602 overlies thegate dielectric layer 1600 and can be part of subsequently-formed gateelectrodes. The conductive layer 1602 can be conductive as deposited orcan be deposited as a highly resistive layer (e.g., undoped polysilicon)and subsequently made conductive. The conductive layer 1602 can includea metal-containing or semiconductor-containing material. In oneembodiment, the thickness of the conductive layer 1602 is selected suchthat, from a top view, substantially vertical edges of the conductivelayer 1602 are near the edge of the drain regions 1102 and 1122. In anembodiment, the conductive layer 1602 is deposited to a thickness ofapproximately 0.1 microns to approximately 0.15 microns.

After the conductive layer 1602 is formed, the semiconductor layer 304can be doped to form well regions 1604 in FIG. 16. The conductivity typeof the well regions 1604 and 1624 are opposite that of the drain regions1102 and 1122 and buried conductive region 102. In an embodiment, borondopant is introduced through the conductive layer 1602 and the gatedielectric layer 1600 into semiconductor layer 304 to provide p-typedopant for the well regions 1604 and 1624. In one embodiment, the wellregions 1604 have depths greater than a depth of subsequently-formedsource regions, and in another embodiment, the well regions 1604 and1624 have depths of at least approximately 0.3 microns. In a furtherembodiment, the well regions 1604 and 1624 have depths no greater thanapproximately 2.0 microns, and in still another embodiment, no greaterthan approximately 1.5 microns. By way of example, the well region 1604and 1624 can be formed using two or more ion implantations. In aparticular example, each ion implantation is performed using a dose ofapproximately 1.0×10¹³ atoms/cm², and the two implants having energiesof approximately 25 KeV and approximately 50 KeV. In another embodiment,more or fewer ion implantations may be performed in forming the wellregions. Different doses may be used at the different energies, higheror lighter doses, higher or lower energies, or any combination thereofmay be used to meet the needs or desires for a particular application.

In an alternate embodiment (not illustrated), the dose of the ionimplantation forming well regions 1604 and 1624 is increased tocompensate for the drain regions 1102 and 1122 when portions of lightlydoped regions 1106 and 1126 extend across the unit cell of thetransistor. In still another embodiment, conductive layer 1602 is notdeposited, and the implant of forming well regions 1604 and 1624 usessidewall spacers 1502 as a hardmask edge instead. In a furtherparticular embodiment, these two embodiments can be combined.

Additional conductive material is deposited on the conductive layer 1602and etched to form to gate electrodes 1702 and 1722, as illustrated inFIG. 17. The additional conductive material can include any of thematerials previously described with respect to the conductive layer1602. Similar to the conductive layer 1602, the additional conductivematerial can be conductive as deposited or can be deposited as a highlyresistive layer (e.g., undoped polysilicon) and subsequently madeconductive. As between the conductive layer 1602 and additionalconductive material, they can have the same composition or differentcompositions. The thickness of the composite conductive layer, includingthe conductive layer 1602 and the additional conductive material, has athickness in a range of approximately 0.15 microns to approximately 0.5microns. When layer 1602 is not present in the workpiece, the widths ofthe gate electrodes 1702 and 1722 (as measured along their bases) isdefined by the thickness of a single conductive layer. In a particularembodiment, the additional conductive material includes polysilicon andcan be doped with an n-type dopant during deposition or dopedsubsequently using ion implantation or another doping technique. Thecomposite conductive layer is anisotropically etched to form gateelectrodes 1702 and 1722. In the illustrated embodiment, the gateelectrodes 1702 and 1722 are formed without using a mask and have shapesof sidewall spacers. An insulating layer (not illustrated) may bethermally grown from the gate electrodes 1702 and 1722 or may bedeposited over the workpiece. The thickness of the insulating layer canbe in a range of approximately 10 nm to approximately 30 nm.

Source regions 1704 and 1724 can be formed using ion implantation. Thesource regions 1704 and 1724 are heavily doped and have an oppositeconductivity type as compared to the well regions 1604 and 1624 and thesame conductivity type as the drain regions 1102 and 1122 and the buriedconductive region 102. The portions of the well regions 1604 lyingbetween the source regions 1704 and drains 1102 and underlying the gateelectrodes 1702 are channel regions for the high-side power transistors,and the portions of the well regions 1624 lying between the sourceregions 1724 and drains 1122 and underlying the gate electrodes 1722 arechannel regions for the low-side power transistors.

Well contact regions 1804 and 1824 are formed within the well regions1604 and 1624, respectively, as illustrated in FIG. 18. Insulatingspacers 1802 are formed along the gate electrodes 1702 and 1722 andcover portions of the source regions 1704 and 1724 closer to the gateelectrodes 1702 and 1722, wherein exposed portions (not illustrated inFIG. 18) of the source regions 1704 and 1724 lie closer to theconductive plugs 1002. The insulating spacers 1802 can include an oxide,a nitride, an oxynitride, or any combination thereof, and have widths atthe bases of the insulating spacers 1802 in a range of approximately 50nm to approximately 500 nm.

The exposed portions of the source regions 1704 and 1724 are etched toexpose underlying portions of the well regions 1604 and 1624,respectively. Depending on the composition of the conductive plugs,portions of the conductive plugs 1002 may or may not be etched when thesource regions 1704 and 1724 are etched. If the conductive plugs 1002and the semiconductor layer 304 (from which the well regions 1604 and1624 and the source regions 1704 and 1724 are formed) are principallysilicon, then part or all of the conductive plugs 1002 may be etchedwhen etching through the source regions 1704 and 1724. If the conductiveplugs 1002 and source regions 1704 and 1724 include dissimilarmaterials, substantially none or an insignificant portion of theconductive plugs 1002 may be etched when etching through the sourceregions 1704 and 1724.

Well contact regions 1804 and 1824 are formed from the exposed portionsof the well regions 1604 and 1624, respectively. The well contactregions 1804 and 1824 have the same conductivity type as the wellregions 1604 and 1624 and have the opposite conductivity type ascompared to the source regions 1704 and 1724. In a particularembodiment, the well contact regions 1804 and 1824 have a dopantconcentration of at least approximately 10¹⁹ atoms/cm³ to allow ohmiccontacts to be subsequently formed.

In another embodiment (not illustrated), an additional implant (notillustrated) of the same conductivity type as the well regions 1604 and1624 and of the opposite conductivity type as the source regions 1704and 1724 may be used to form well contact regions below the sourceregions 1704 and 1724. The additional implant may be performed before orafter forming the source regions 1704 and 1724 and before forming theinsulating spacers 1802. In this embodiment, the well contact regionsunderlie substantially all of the source regions 1704 and 1724. Afterthe source regions 1704 and 1724 and the well contact regions areformed, the insulating spacers 1802 are formed such that only portionsof the source regions 1704 and 1724 are covered. An etch as previouslydescribed is performed to remove portions of the source regions 1704 and1724 and expose portions of the underlying well contact regions.

Referring to FIG. 19, portions of the insulating spacers 1802 are etchedto expose portions of the source regions 1704 and 1724. Conductivestraps 1902 are then formed to electrically connect the source regions1704, well contact regions 1804, and corresponding conductive plugs 1002together, and other conductive straps 1902 are formed to electricallyconnect the source regions 1724 and well contact regions 1824 together.In a particular embodiment, a refractory metal, such as Ti, Ta, W, Co,Pt, or the like, can be deposited over the workpiece and selectivelyreacted with exposed silicon, such as substantially monocrystalline orpolycrystalline silicon, to form a metal silicide. Unreacted portions ofthe refractory metal overlie the insulating layer 1402 and insulatingspacers 1802 are removed, thus leaving the conductive straps 1902.Although not illustrated, an uppermost portion of the gate electrodes1702 and 1722 may be exposed and react with the refractory metal.However, a metal silicide at such a location is spaced apart from theconductive straps 1902, and therefore, an electrical short is not formedbetween the gate electrodes 1702 and 1722 and any of the source regions1704 and 1724 and well contact regions 1804 and 1824. At this point inthe process, the high-side and low-side power transistors are formed.

FIG. 20 includes an illustration of a substantially completed electronicdevice. An interlevel dielectric (ILD) layer 2002 is formed and caninclude an oxide, a nitride, an oxynitride, or any combination thereof.The ILD layer 2002 can include a single film having a substantiallyconstant or changing composition (e.g., a high phosphorus contentfurther from the semiconductor layer 304) or a plurality of discretefilms. An etch-stop film, an antireflective film, or a combination maybe used within or over the ILD layer 2002 to help with processing. TheILD layer 2002 may be planarized to improve process margin duringsubsequent processing operations (e.g., lithography, subsequentpolishing, or the like).

A resist layer (not illustrated) is formed over the ILD layer 2002 andis patterned to define resist layer openings. An anisotropic etch isperformed to define contact openings that extend through the ILD layer2002 to expose portions of the drain regions 1102 and conductive straps1902 as illustrated in FIG. 20. The etch can be performed as a timedetch or as an endpoint detected etch with a timed overetch. The endpointmay be detected when the drain regions 1102 or the conductive straps1902 become exposed.

Conductive plugs 2004 and 2024 are formed within the contact openingswithin the ILD layer 2002. The conductive plugs 2004 are electricallyconnected to the drain regions 1102 of the high-side power transistor,and the conductive plugs 2024 are electrically connected to the sourceregions 1724 and well contact regions 1824 (via the conductive straps1902) of the low-side power transistor. An interconnect 2006 overliesthe ILD layer 2002 and electrically connects the drain regions 1102 ofthe high-side power transistors together, and an interconnect 2026overlies the ILD layer 2002 and electrically connects the source regions1724 of the low-side power transistors together. Thus, the interconnect2006 may be coupled to a drain terminal for the electronic device, andthe interconnect 2026 can be coupled to a source terminal for theelectronic device. Although not illustrated, other conductive membersare used to electrically connect the gate electrodes 1702 of thehigh-side power transistors together, and still other conductive membersare used to electrically connect the gate electrodes 1722 of thelow-side power transistors together. Furthermore, still other conductivemembers can be used to electrically connect the conductive layer 1302 tothe source regions 1704 of the high-side power transistors, and stillother conductive members can be used to electrically connect theconductive layer 1302 to the source regions 1724 of the low-side powertransistors. Control logic can be coupled to the gate electrodes 1702and 1722 to control the operation of the serially-connected high-sideand low-side power transistors. The buried conductive region 102 may becoupled to an output terminal for the electronic device.

Although not illustrated, additional or fewer layers or features may beused as needed or desired to form the electronic device. Field isolationregions are not illustrated but may be used to help electrically isolateportions of the high-side power transistors from the low-side powertransistors. In another embodiment, more insulating and interconnectlevels may be used. For example, a particular interconnect level can beused for the conductive layer 1302 and a different interconnect levelcan be used to for the gate electrodes 1702 and 1722. A passivationlayer can be formed over the workpiece as illustrated in FIG. 20. Afterreading this specification, skilled artisans will be able to determinelayers and features for their particular application.

The electronic device can include many other power transistors that aresubstantially identical to the power transistors as illustrated in FIG.20. The high-side power transistors can be connected in parallel to eachother, and the low-side power transistors can be connected in parallelto each other. Such a configuration can give a sufficient effectivechannel width of the electronic device that can support the relativelyhigh current flow that is used during normal operation of the electronicdevice. In a particular embodiment, each power transistor may bedesigned to have a maximum source-to-drain voltage difference ofapproximately 30 V, and a maximum source-to-gate voltage difference ofapproximately 20 V. During normal operation, the source-to-drain voltagedifference is no greater than approximately 20 V, and the source-to-gatevoltage difference is no greater than approximately 9 V. The conductivelayer 1302 can be kept at a substantially constant voltage with respectto a source terminal of either the high-side or low-side transistorduring operation to reduce the drain-to-gate capacitance. In aparticular embodiment, the conductive layer 1302 may be at substantially0 V with respect to a corresponding source terminal, in which case, theconductive layer 1302 can act as a virtual grounding plane. This virtualgrounding plane can be at a different potential than the true ground ofthe application circuit in the case when the source terminal of thecorresponding transistor is connected to a switching node in thecircuit. In another embodiment, a portion of the conductive layer 1302near the high-side power transistor may be coupled to the source regions1704, and another portion of the conductive layer 1302 near the low-sidepower transistor may be coupled to the source regions 1724.

In accordance with the concepts described herein, an integrated circuitcan be formed such that the high-side and low-side power transistors arelocated within different parts of the same die. A buried conductiveregion can electrically connect the source of the high-side powertransistor to the drain of the low-side power transistor. Parasiticresistance and inductance can be lowered because wire bonds between adie with the high-side power transistor and another die with thelow-side power transistor are no longer required.

One particular benefit of reducing the parasitic inductance between thehigh-side and low-side power transistors is the reduction of ringing ofthe switching or output node when switching between the high-side andlow-side power transistors. During this transient, the parasiticinductance between the high-side and low-side power transistors reactswith the output capacitance of the low-side transistor to form aresonant circuit. This resonant circuit can create undesirable, highfrequency voltage swings on the output node of the circuit. Thesevoltage swings can create undesirable voltage stresses on the devices,complicate the control circuitry, and reduce the overall powerconversion efficiency of the voltage regulator. Embodiments describedherein can enable a reduction in the parasitic inductance between thehigh-side and low-side power transistors, thereby minimizing output noderinging. Furthermore, the remaining parasitic between the high-side andlow-side power transistors is dominated by the resistance of the buriedconductive layer, resulting in a more effective damping of the ringingat the output node.

The parasitic resistance between the two transistor types can be reducedeven more by combining small high-side and low-side power transistors inpairs, and then connecting multiple pairs of these transistors togetherin parallel to create a larger effective device. If the average lateraldistance between the high-side and low-side power transistors in thesepairs is less than the thickness of the buried conductive layer, thencurrent from the high-side transistor does not have to flow through theentire thickness of the buried conductive layer to reach the low-sidetransistor, thereby reducing the total parasitic resistance.

Other embodiments can be used if needed or desired. In a particularembodiment, a liner layer may be formed as vertical isolation regions,similar to the vertical isolation regions 424, within the deep trenchesbefore forming conductive structures, similar to the conductivestructures 824. Further, the conductive structures may be formed for thehigh-side power transistors separately from the conductive structuresfor the low-side power transistors. The starting point for this processis after forming of the semiconductor layer 304, the pad layer 306, andthe stopping layer 308, as illustrated in FIG. 3. A mask (notillustrated) is formed over the workpiece, and trenches 2102 for thehigh-side power transistors are formed and extend completely through thelayers 304, 306, and 308, as illustrated in FIG. 21. In anotherembodiment (not illustrated), the trenches 2102 may extend mostly, butnot completely, through the semiconductor layer 304. The low-side powertransistors are covered by the mask when the trenches 2102 are formed. Asemiconductor layer 2104 is formed along exposed surfaces of theworkpiece, including the stopping layer 308 and within the trenches2102. The semiconductor layer 2104 has a thickness in a range ofapproximately 20 to 90 nm. The semiconductor layer 2104 can be p-typedoped as formed or may be subsequently doped to a doping concentrationno less than approximately one order of magnitude lower than the dopedburied region 206. In this embodiment, the semiconductor layer 2104 isalso formed over the locations for the low-side power transistors.

The semiconductor layer 2104 is anisotropically etched and formsvertical isolation regions 2204, as illustrated in FIG. 22. Thesemiconductor layer 2104 may be amorphous or polycrystalline asdeposited. In this embodiment, the vertical isolation regions 2204,which are in the form of sidewall spacers, perform substantially thesame function as previously described with respect to the verticalisolation regions 724. The semiconductor layer 2104 is overetched suchthat the top of the vertical isolation regions 2204 lie at or below thebottom of the pad layer 306. The etching removes the semiconductor layer2104 from locations where the low-side power transistors will be formed.In another embodiment (not illustrated), a selective growth or otherselective formation process may be used to form the vertical isolationregions 2204. The selective process may form the semiconductor layeralong exposed semiconductor surfaces, which in this particularembodiment, are along the sidewalls and bottoms of the trenches 2102. Ina particular embodiment, such semiconductor layer may be substantiallymonocrystalline. An anisotropic etch can be used to remove portions ofthe selectively-formed semiconductor layer lying along the bottoms ofthe trenches 2102. The stopping layer 308 substantially prevents theselectively-formed semiconductor layer from forming over thesemiconductor layer 304 for the high-side and low-side powertransistors.

Insulating sidewall spacers 2206 can be formed along the exposedsurfaces within the trenches 2102. The insulating sidewall spacers 2206can include an oxide, a nitride, an oxynitride, or any combinationthereof. The layer from which the insulating sidewall spacers 2206 areformed can be thermally grown or deposited, and the layer can beanisotropically etched to remove the layer from the bottoms of thetrenches 2102. If needed or desired, an etch can be performed to extendthe trenches 2102 closer to or further into the buried conductive region102. In another embodiment, the insulating sidewall spacers 2206 areomitted.

Conductive structures 2324 are formed within the trenches 2102, asillustrated in FIG. 23. The conductive structures 2324 can be formedusing any of the materials and techniques as previously described forthe conductive structures 824.

In FIG. 24, a sacrificial protective layer 2402 may be formed over theconductive structures 2324 for the high-side power transistors toprotect the conductive structures 2324 and other features within thetrenches 2102 from being adversely affected by the formation ofcorresponding conductive structures for the low-side power transistors.The sacrificial protective layer 2402 can have a different compositionas compared to the conductive structures 2324, the insulating spacers2206, the vertical isolation regions 2204, and the semiconductor layer304. If each of the conductive structures 2324, the insulating spacers2206, the vertical isolation regions 2204, and the semiconductor layer304 includes an oxide, a silicide, or is primarily silicon (i.e., not asilicon oxide or nitride), then the sacrificial protective layer 2402can include a nitride or an oxynitride. In a particular embodiment, theprotective layer 2402 and stopping layer 308 have substantially the samecomposition. The sacrificial protective layer 2402 can have a thicknessin a range of approximately 5 nm to approximately 30 nm.

After the sacrificial protective layer 2402 is formed, trenches 2422 andinsulating spacers 2426 may be formed for the low-side powertransistors, as illustrated in FIG. 24. The trenches 2422 may be formedusing any of the techniques as described with respect to the trenches2102. The trenches 2422 and 2102 may be formed using the same techniqueor different techniques. The insulating spacers 2426 may be formed usingany of the materials, thicknesses, and techniques as described withrespect to the insulating spacers 2206. The insulating spacers 2426 and2206 may be formed using the same composition or different compositions,substantially the same thickness (widths at the bases) or differentthicknesses, and the same formation technique or different formationtechniques.

Conductive structures 2524 are formed within the trenches 2422, asillustrated in FIG. 25. The conductive structures 2524 can be formedusing any of the materials and techniques as previously described forthe conductive structures 824. The conductive structures 2324 and 2524may be formed using the same composition or different compositions,substantially the same amount of recession within the trenches 2102 and2422 or different amounts of recession, and the same formation techniqueor different formation techniques. The sacrificial protective layer 2402may be removed, and processing continued as previously described withrespect to formation of the conductive plugs 1002 and removal of thestopping layer 308 and the pad layer 306 (see FIG. 10).

In another embodiment, the order of forming the features as describedwith respect to FIGS. 21 to 25 may be reversed. The processing atlocations where the low-side power transistors are formed may beperformed before processing at locations where the high-side powertransistors are formed. In this particular embodiment, the protectivesacrificial layer 2402 would be formed over locations where the low-sidepower transistors are being formed, as opposed to the high-side powertransistors.

In still another embodiment, one or more bipolar transistors may be usedinstead of the field-effect transistors. In this embodiment, currentcarrying electrodes can include emitters and collectors instead of thesources and drains, and control electrodes can include bases instead ofgate electrodes. An emitter of a high-side bipolar transistor can beelectrically connected to a collector of a low-side bipolar transistor.If a buried collector is used, the buried collector can be patterned toallow a properly isolated connection to be made to the buried conductiveregion 102.

Embodiments as described herein may include regions having a peak dopantconcentration of less than approximately 10¹⁹ atoms/cm³. Should an ohmiccontact with a metal-containing material be needed or desired, a portionof such doped region may be locally doped to have a peak dopantconcentration of at least approximately 10¹⁹ atoms/cm³. In anon-limiting example, the buried doped region 206 may have a peak dopantconcentration less than approximately 10¹⁹ atoms/cm³. If the conductivestructures 824 include W or WSi, portions of the buried doped region 206near the conductive structures 824, such as along the bottom of thetrenches 624, may be implanted to increase locally the peak dopantconcentration to be at least approximately 10¹⁹ atoms/cm³ to help formohmic contacts between the buried doped region 206 and conductivestructures 824.

Many different aspects and embodiments are possible. Some of thoseaspects and embodiments are described below. After reading thisspecification, skilled artisans will appreciate that those aspects andembodiments are only illustrative and do not limit the scope of thepresent invention.

In a first aspect, an electronic device can include an integratedcircuit comprising a buried conductive region and a semiconductor layeroverlying the buried conductive region, wherein the semiconductor layerhas a primary surface and an opposing surface, and the buried conductiveregion lies closer to the opposing surface than to the primary surface.The electronic device can also include a first doped region within thesemiconductor layer, wherein the first doped region lies closer toprimary surface than to the opposing surface, and a firstcurrent-carrying electrode of a first transistor includes the firstdoped region, wherein the first current-carrying electrode is a sourceor an emitter and is electrically connected to the buried conductiveregion. The electronic device can further include a second doped regionwithin the semiconductor layer, wherein the second doped region liescloser to primary surface than to the opposing surface, and a secondcurrent-carrying electrode of a second transistor includes the seconddoped region, wherein the second current-carrying electrode is a drainor a collector and is electrically connected to the buried conductiveregion.

In an embodiment of the first aspect, the first and second transistorsare both n-channel transistors or both p-channel transistors, the firstcurrent carrying electrode is a source of the first transistor, and thesecond current carrying electrode is a drain of the second transistor.In another embodiment, the electronic device further includes a firstvertical conductive structure extending through the semiconductor layerand electrically connected to the buried conductive region and the firstdoped region or the second doped region. In a particular embodiment, theelectronic device further includes a second vertical conductivestructure extending through the semiconductor layer and electricallyconnected to the buried conductive region and the second doped region.The first vertical conductor is electrically connected to the buriedconductive region and the first doped region, the first doped region isspaced apart from the second doped region, and the first verticalconductive structure is spaced apart from the second vertical conductivestructure. In another particular embodiment, the first verticalconductive structure includes a first doped semiconductor region havinga same conductivity type as the buried conductive region.

In a further particular embodiment of the first aspect, the electronicdevice further includes a second doped semiconductor region having anopposite conductivity type as the buried conductive region, wherein thesecond doped semiconductor region extends through the semiconductorlayer. In a more particular embodiment, the semiconductor layer issubstantially monocrystalline, and the second doped semiconductor regionis polycrystalline. In an even more particular embodiment, theelectronic device further includes a second vertical conductivestructure extending through the semiconductor layer and electricallyconnected to the buried conductive region and the second doped region.In a further particular embodiment, the electronic device furtherincludes a first insulating liner lying between the second verticalconductive region and the semiconductor layer, a second insulating linerlying between the first vertical conductive region and the semiconductorlayer, or both the first and second insulating liners.

In another more particular embodiment of the first aspect, the seconddoped semiconductor region has a dopant concentration of at leastapproximately 1×10¹⁹ atoms/cm³, and the semiconductor layer has abackground dopant concentration no greater than approximately 1×10¹⁷atoms/cm³. In a further embodiment, each of the first transistor and thesecond transistor is a power transistor.

In a second aspect, a process of forming an electronic device includingan integrated circuit can include providing a substrate that includes afirst semiconductor layer over a buried conductive region, wherein thefirst semiconductor layer has a primary surface and an opposing surface,and the buried conductive region lies closer to the opposing surfacethan to the primary surface. The process can also include forming afirst doped region within the semiconductor layer and along the primarysurface of the first semiconductor layer, wherein the first doped regionis part of a first current-carrying electrode of a first transistor, andthe first current-carrying electrode is a source or an emitter. Theprocess can further include forming a first vertical conductivestructure extending through the first semiconductor layer; wherein, in afinished device, the buried conductive region, the first verticalconductive structure, and the first doped region are electricallyconnected to one another. The process can also include forming a seconddoped region within the first semiconductor layer and along the primarysurface of the first semiconductor layer, wherein the second dopedregion is part of a second current-carrying electrode of a secondtransistor, and the second current-carrying electrode is a drain or acollector. The process can further include forming a second verticalconductive structure extending through the first semiconductor layer,wherein, in a finished device, the buried conductive region, the secondvertical conductive structure, and the second doped region areelectrically connected to one another.

In an embodiment of the second aspect, the process further includesforming a first trench extending through the first semiconductor layerbefore forming the first vertical conductive structure therein, andforming a second trench extending through the first semiconductor layerbefore forming the second vertical conductive structure therein. In aparticular embodiment, forming the first semiconductor layer includesepitaxially growing a substantially monocrystalline semiconductor layer,forming the first vertical conductive region includes depositing apolycrystalline material, and forming the second vertical conductiveregion includes depositing the polycrystalline material. In anotherparticular embodiment, the process further includes forming a firstinsulating liner within the second trench. In a more particularembodiment, the process further includes forming a second insulatingliner within the first trench.

In a further particular embodiment of the second aspect, the processfurther includes forming a first doped semiconductor region along asidewall of the first trench. The first doped semiconductor region hasan opposite conductivity type as compared to the buried conductiveregion and a dopant concentration higher than the first semiconductorlayer. A first insulating liner is disposed between the first dopedsemiconductor region and the first vertical conductive region. In a moreparticular embodiment, forming the first doped semiconductor regionincludes depositing a second semiconductor layer along exposed surfacesof the first trench, and anisotropically etching the secondsemiconductor layer to remove a portion of the second semiconductorlayer lying along a bottom of the trench and exposing a portion of theburied conductive region.

In still another particular embodiment of the second aspect, the processfurther includes implanting a dopant into the first semiconductor layerto form an implanted doped semiconductor region within the firstsemiconductor layer. The dopant has an opposite conductivity type ascompared to the buried region, forming the first trench is performedafter forming the implanted doped region, and forming the first verticalconductive region is performed such that the first vertical conductiveregion is formed within the first trench.

In a further particular embodiment, the process further includes forminga doped semiconductor region, wherein the doped semiconductor region hasan opposite conductivity type as compared to the buried conductiveregion and a dopant concentration higher than the first semiconductorlayer, and in a finished device, the doped semiconductor region liescloser to the buried conductive region and an opposing surface of thefirst semiconductor layer than a primary surface of the firstsemiconductor layer. In a more particular embodiment, each of the buriedconductive region, the first and second doped regions, and thesemiconductor doped region has a dopant concentration of at leastapproximately 1×10¹⁹ atoms/cm³, and the first semiconductor layer has abackground dopant concentration no greater than approximately 1×10¹⁷atoms/cm³. In another embodiment the process further includes forming ahorizontally-oriented doped region lying adjacent to the primary surfaceand the second doped region, wherein the horizontally-oriented dopedregion is a drift region for the second transistor.

Note that not all of the activities described above in the generaldescription or the examples are required, that a portion of a specificactivity may not be required, and that one or more further activitiesmay be performed in addition to those described. Still further, theorder in which activities are listed is not necessarily the order inwhich they are performed.

Certain features are, for clarity, described herein in the context ofseparate embodiments, may also be provided in combination in a singleembodiment. Conversely, various features that are, for brevity,described in the context of a single embodiment, may also be providedseparately or in any subcombination. Further, reference to values statedin ranges includes each and every value within that range.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any feature(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature of any or all the claims.

The specification and illustrations of the embodiments described hereinare intended to provide a general understanding of the structure of thevarious embodiments. The specification and illustrations are notintended to serve as an exhaustive and comprehensive description of allof the elements and features of apparatus and systems that use thestructures or methods described herein. Separate embodiments may also beprovided in combination in a single embodiment, and conversely, variousfeatures that are, for brevity, described in the context of a singleembodiment, may also be provided separately or in any subcombination.Further, reference to values stated in ranges includes each and everyvalue within that range. Many other embodiments may be apparent toskilled artisans only after reading this specification. Otherembodiments may be used and derived from the disclosure, such that astructural substitution, logical substitution, or another change may bemade without departing from the scope of the disclosure. Accordingly,the disclosure is to be regarded as illustrative rather thanrestrictive.

1. An electronic device including an integrated circuit comprising: aburied conductive region; a semiconductor layer overlying the buriedconductive region, wherein the semiconductor layer has a primary surfaceand an opposing surface, and the buried conductive region lies closer tothe opposing surface than to the primary surface; a high-side transistorthat includes a first current-carrying electrode that is a source or anemitter, wherein: the first current-carrying electrode is electricallyconnected to the buried conductive region and includes a first dopedregion within the semiconductor layer; and the first doped region liescloser to primary surface than to the opposing surface; a low-sidetransistor that includes a second current-carrying electrode that is adrain or a collector, wherein: the second current-carrying electrode iselectrically connected to the buried conductive region and includes asecond doped region within the semiconductor layer; and the second dopedregion lies closer to primary surface than to the opposing surface; afirst vertical conductive structure extending through the semiconductorlayer and electrically connected to and adjacent to the buriedconductive region and to the first doped region or the second dopedregion; and a first insulating sidewall spacer laterally disposedbetween the semiconductor layer and the first vertical conductivestructure.
 2. The electronic device of claim 1, further comprising asecond vertical conductive structure extending through the semiconductorlayer and electrically connected to and adjacent to the buriedconductive region and the second doped region, wherein the firstvertical conductive structure is electrically connected to and adjacentto the first doped region.
 3. The electronic device of claim 2, furthercomprising a second insulating sidewall spacer laterally disposedbetween the semiconductor layer and the second vertical conductivestructure.
 4. The electronic device of claim 3, wherein the high-sidetransistor further comprises a vertical, doped isolation region, whereinthe first insulating sidewall spacer is disposed between the firstvertical conductive structure and the vertical, doped isolation region.5. The electronic device of claim 4, wherein the low-side transistordoes not include a vertical, doped isolation region adjacent to thesecond insulating sidewall spacer.
 6. An electronic device including anintegrated circuit comprising: a buried conductive region; asemiconductor layer overlying the buried conductive region, wherein thesemiconductor layer has a primary surface and an opposing surface, andthe buried conductive region lies closer to the opposing surface than tothe primary surface; a first transistor that includes a firstcurrent-carrying electrode that is electrically connected to the buriedconductive region, wherein: the first-current carrying electrodeincludes a first doped region within the semiconductor layer; and thefirst doped region lies along the primary surface; and a first verticalconductive structure extending through the semiconductor layer andelectrically connected to and adjacent to the buried conductive regionand the first doped region, wherein an uppermost surface of the firstvertical conductive structure is at an elevation lower than the primarysurface.
 7. The electronic device of claim 6, further comprising a firstconductive plug overlying the first vertical conductive structure,wherein a combination of the first vertical conductive structure and thefirst conductive plug has a T-shape.
 8. The electronic device of claim7, further comprising a conductive member, wherein: the firstcurrent-carrying electrode is a source or an emitter; the firsttransistor further includes a well contact region; and the conductivemember is immediately adjacent to the first current-carrying electrode,the well contact region, and the first conductive plug.
 9. Theelectronic device of claim 8, wherein the conductive member overlies thefirst conductive plug.
 10. The electronic device of claim 8, wherein thefirst conductive plug has a horizontal surface spaced apart from anuppermost surface of the first conductive plug, wherein the horizontalsurface lies at an elevation that is higher than an elevation of anuppermost surface of the well contact region.
 11. The electronic deviceof claim 7, wherein a lowermost portion of the first conductive pluglies at an elevation below the primary surface.
 12. The electronicdevice of claim 11, further comprising a vertical, doped isolationregion, wherein the conductive plug overlies the vertical, dopedisolation region.
 13. The electronic device of claim 6, furthercomprising: a low-side transistor that includes a secondcurrent-carrying electrode that is electrically connected to the buriedconductive region, wherein; the second-current carrying electrode is adrain or a collector and includes a second doped region within thesemiconductor layer; and the second doped region lies along the primarysurface; and a second vertical conductive structure extending throughthe semiconductor layer and electrically connected to and adjacent tothe buried conductive region and the second doped region, wherein thefirst transistor is a high-side transistor, the first current-carryingelectrode is a source or an emitter, and the first current-carryingelectrode is electrically connected to the second current-carryingelectrode via a combination of the first vertical conductive structure,the second vertical conductive structure, and the buried doped region.14. The electronic device of claim 13, further comprising: a firstconductive plug overlying the first vertical conductive structure; and asecond conductive plug overlying the second vertical conductivestructure, wherein each of a first combination of the first verticalconductive structure and the first conductive plug and a secondcombination of the second vertical conductive structure and the secondconductive plug has a T-shape.
 15. The electronic device of claim 6,further comprising insulating sidewall spacers along opposite sides ofthe first vertical conductive structure.
 16. An electronic deviceincluding an integrated circuit comprising: a buried conductive region;a semiconductor layer overlying the buried conductive region, whereinthe semiconductor layer has a primary surface and an opposing surface,and the buried conductive region lies closer to the opposing surfacethan to the primary surface; a high-side transistor that includes afirst current-carrying electrode that is a source or an emitter,wherein: the first current-carrying electrode is electrically connectedto the buried conductive region and includes a first doped region withinthe semiconductor layer; the first doped region lies closer to primarysurface than to the opposing surface; a low-side transistor thatincludes a second current-carrying electrode that is a drain or acollector, wherein: the second current-carrying electrode iselectrically connected to the buried conductive region and includes asecond doped region within the semiconductor layer; and the second dopedregion lies closer to primary surface than to the opposing surface; oneor more vertical conductive structures that, from a cross-sectionalview, are adjacent to opposite sides of a portion of the semiconductorlayer corresponding to the high-side transistor; and from across-sectional view, a pair of vertical, doped isolation regions,wherein each vertical, doped isolation region is disposed between theportion of the semiconductor layer and the one or more verticalconductive structures, wherein the pair of vertical, doped isolationregions do not extend under the one or more openings.
 17. The electronicdevice of claim 16, further comprising a horizontal doped region that isadjacent to the pair of vertical, doped isolation regions, over theburied conductive region, and spaced apart from the primary surface,wherein the horizontal doped region and the pair of vertical, dopedisolation regions have a same conductivity type that is opposite aconductivity type of the buried conductive region.
 18. The electronicdevice of claim 17, wherein a thickness of the horizontal doped regionis less than a thickness of the portion of the semiconductor layeroverlying the horizontal doped region.
 19. The electronic device ofclaim 17, wherein the horizontal doped region is immediately adjacent tothe buried doped region.
 20. The electronic device of claim 16, furthercomprising another one or more vertical conductive structures that, froma cross-sectional view, are adjacent to opposite sides of a portion ofthe semiconductor layer corresponding to the low-side transistor,wherein another pair of vertical, doped isolation regions are notdisposed between the other one or more vertical conductive structuresand another portion of the semiconductor layer corresponding to thelow-side transistor.